JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-220Fa package
・Satisfactory
linearity of h
FE
・Low
collector to emitter saturation voltage
・Complement
to type 2SD1985/1985A
APPLICATIONS
・For
power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
2SB1393 2SB1393A
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SB1393
V
CBO
Collector-base voltage
2SB1393A
2SB1393
V
CEO
Collector-emitter voltage
2SB1393A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
℃
℃
Open collector
Open base
-80
-5
-3
-5
25
W
V
A
A
Open emitter
-80
-60
V
CONDITIONS
VALUE
-60
V
UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB1393
I
C
=-30mA , I
B
=0
2SB1393A
I
C
=-3A; I
B
=-0.375A
V
CE
=-4V; I
C
=-3A
2SB1393
2SB1393A
2SB1393
2SB1393A
V
CE
=-60V ;V
BE
=0
CONDITIONS
2SB1393 2SB1393A
MIN
-60
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-80
-1.2
-1.8
V
V
V
CEsat
V
BE
Collector-emitter saturation voltage
Base-emitter voltage
I
CES
Collector
cut-off current
-200
V
CE
=-80V; V
BE
=0
V
CE
=-30V; I
B
=0
-300
V
CE
=-60V; I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-4V
I
C
=-3A ; V
CE
=-4V
I
C
=-0.1A; V
CE
=-5V;f=1MHz
70
10
20
-1.0
250
μA
I
CEO
Collector
cut-off current
μA
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
mA
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-1A ;I
B1
=-0.1A
I
B2
=0.1A;V
CC
=-50V
0.5
1.2
0.3
μs
μs
μs
h
FE-1
Classifications
Q
70-150
P
120-250
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1393 2SB1393A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1393 2SB1393A
4
